note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: xn0033j doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft8600 __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package /5 = to-5 sft8600/5 1 amp 1000 volts npn transistor features: ? bvceo to 400 volts ? very low saturation voltage ? very low leakage ? high gain from 20 ma to 250 ma ? 200c operating, gold eutectic die attach ? superior performance over jedec 2n5010-15 series ? high speed switching tf = 0.4s typ maximum ratings symbol value units collector ? emitter voltage (rbe = 1k ? ) v ceo v cer 400 1000 v collector ? base voltage v cbo 1000 v emitter ? base voltage v ebo 6 v collector current i c 1 a base current i b 100 ma total device dissipation @ tc = 100o c derate above 25o c p d 3.3 33 w mw/oc operating and storage temperature tj, tstg -65 to +200 oc thermal resistance, junction to case r jc 30 oc/w notes: 1 / for ordering information, pr ice, operating curv es, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. to-5 (/5)
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: xn0033j doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft8600/5 electrical characteristic symbol min max units collector ? emitter breakdown voltage (ic= 10madc) (ic= 20adc, rbe = 1k ? ) bv ceo bv cer 400 1000 ?? v collector?base breakdown voltage (ic= 20adc) bv cbo 1000 ?? v emitter?base breakdown voltage (ie= 20adc) bv ebo 6 ?? v collector cutoff current (vcb= 800v) (vcb= 800v @ tc= 150c) i cbo ?? 10 500 adc collector cutoff current (vce= 400 vdc) i ceo ?? 10 adc emitter cutoff current (veb= 4v) i ebo ?? 1 adc dc current gain* (ic= 100madc, vce= 5vdc, tc= -55) (ic= 5madc, vce= 5vdc) (ic= 10madc, vce= 5vdc) (ic= 100madc, vce= 5vdc) (ic= 250madc, vce= 5vdc) h fe 10 30 40 20 15 200 ?? collector ? emitter saturation voltage* (ic= 20madc, ib= 2madc) (ic= 100madc, ib=10madc) v ce(sat) ?? ?? 0.3 0.5 vdc base ? emitter saturation voltage * (ic= 20madc, ib= 2madc) (ic=100madc, ib=10madc) v be(sat) ?? ?? 0.8 1.0 vdc current gain bandwidth product (ic= 100madc, vce= 10vdc, f= 10mhz) f t 8.0 ?? mhz output capacitance (vcb= 20vdc, ie= 0 adc, f= 1.0mhz) cob ?? 15 pf delay time rise time storage time fall time (vcc = 125vdc, ic = 100 madc, ib1 = 20 madc, ib2 = 40 madc) td tr ts tf --- --- 50 150 3 800 nsec nsec sec nsec * pulse test: pulse width = 300 s, duty cycle = 2%
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: xn0033j doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sft8600/5 case outline: to-5 figure 1 outline and dimensions all dimensions are in inches tolerances: (unless otherwise specified) xx: 0.01? xxx: 0.005? pin 1: emitter pin 2: base pin 3: collector case: collector figure 2 safe operating area (t = 1 sec)
|
